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Transport Properties and the Semiconductor-to-Metal Transition in V3O5 at High Pressure

S. Asbrink 2V. A. Sidorov 1Alicja Waśkowska 3D. Badurski 3

1. Institute for High Pressure Physics, Russian Academy of Sciences, Troitsk 142092, Russian Federation
2. University of Göteborg, Oorganisk Kemi GU, Department of Inorganic Chemistry, Göteborg, Sweden
3. Polish Academy of Sciences, Institute of Low Temperature and Structure Research (INTiBS), Okólna 2, Wrocław 50-422, Poland


V[3]O[5] is a representative of the homologous series of vanadium
oxides V[n]O[2n-1] known as the Magné li phases. The physical and
structural properties of this oxide have widely been described in the
literature. At atmospheric pressure V[3]O[5] is antiferromagnetically
ordered below T[N] = 70 K and is paramagnetic above T[N]. At
T[c] = 428 K a first-order phase transition from
semiconducting-to-metallic state takes place, accompanied with the
structural transformation from the monoclinic space group P2/c to
I2/c. The transition is connected with a redistribution of the
vanadium valence 3d electrons. A complete site separation is of the
V3+ and V4+ ions at room temperature becomes only partly
differentiated after the transition to the metallic-like state. The
decrease of the electrical resistivity above T[c] is accompanied with
a rapid increase of the optical reflectivity in the infra-red
frequency range.
Further information on the characteristics of the
semiconducting-to-metallic state has been obtained by application of
high-pressure. The X-ray single crystal diffraction measurements
showed the structural phase transition at P[c] = 6.2 GPa, which was
assumed to correspond to the temperature dependent transition at
T[c ]= 428 K. The purpose of the present contribution is to report the
effect of high-pressure on the temperature dependences of the
electrical resistivity. The resistivities were measured by a four
probe method from 4.2 K to 450 K under various pressures up to 10 GPa.
It appeared that at pressures above ~ 6 GPa the transition from the
semiconducting to the metallic state goes in two distinct steps, which
were revealed as a resistivity jumps separated by about 10-30 K,
depending on pressure. The intermediate phase is semiconducting. The
resistivity of the sample decreased systematically when pressure was
increased, and two transition temperatures were shifted towards the
low temperature region. At sufficiently high pressure (above ~ 9 GPa)
the resistivity anomalies became suppressed and the metallic ground
state is realised. The low temperature behavior of resistivity of the
pressure induced metallic phase is typical for strongly correlated
electron systems.


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Presentation: poster at High Pressure School 1999 (3rd), by Alicja Waśkowska
See On-line Journal of High Pressure School 1999 (3rd)

Submitted: 2003-02-16 17:33
Revised:   2009-06-08 12:55