In this work, we use the atomic-layer-deposition (ALD) method to prepare the extra thin Hf-based high-k dielectrics on HF dipped p-type Si substrate. From the typical 100k Hz C-V characteristics and ncsu-CVC model simulation results, we can find that the experimental data matches quite well with the simulation curve which indicates the good quality of the thin films and interface with Si substrate. The equivalent oxide thickness (EOT) of 4.2nm thick HfO2 reaches about 1.39nm with the correction of quantum mechanical effect. On the other hand, the equivalent oxide thickness of the Hf-aluminate (HfAlOx) and HfO2/Al2O3 thin films with the same physical thickness reach about 1.37nm and 1.29nm. The reason for the lower EOT of the HfAlOx and HfO2/Al2O3 thin films comes from more stable interface with Si substrate which is also confirmed from the XPS results. Very weak hysteresis (<20mv) are observed from all the thin films. The leakage current density is around 1.35*10-1、1.55*10-5 and 1.01*10-4 (A/cm2) for Vg at (Vfb-1) volts for the HfO2、HfAlOx and HfO2/Al2O3 thin films. With the incorporate of Al2O3, the crystalline temperature enhances and the less crystalline thin films results in the lower leakage current density. The HfAlOx thin films have less EOT increment with increasing post-deposition temperature than HfO2/Al2O3 thin films which means HfAlOx has the more stable structure than HfO2/Al2O3 on Si substrate. In conclusion, the HfAlOx and HfO2/Al2O3 thin films have more advantages than HfO2 used for high-k MOS applications. The difference between HfAlOx and HfO2/Al2O3 thin films is not so large but still has some interesting results.

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