Limited natural reserves and a necessity of environment protection are the reasons of growing interest in renewable power resources,e.g.the sun power.According to these trends the last decades have seen a rapid development of photovoltaics.A promising progress in this area is expected across applying a-SixNy:H layers.They have a number of functions,e.g. they exhibit optimal antireflection parameters,a content of the hydrogen in the layer is expected to ensure effective passivation of the defects present in the substrate.This is why an application of the a-SixNy:H layers in the technology of the solar cells should allow replacing expensive monocrystalline Si plates with much cheaper polycrystalline ones. The research problem is however that the properties of the layers depend on their chemical composition as wel their microstructure and atomic level structure. This means a crucial role of the choice of the proper technology. The most promising technologies of a-SixNy:H materials are based on Plasma-Enhanced Chemical Vapour Deposition (PE CVD).
In this work we present the result concerning details of RF CVD (Radio Frequency Chemical Vapour Deposition) method applied in the technology of the a-SixNy:H layers on polycrystalline Si substrate.The layers have been synthesized from SiH₄ and N₂ gaseous precursors.A special attention has been paid to a choice of the experimental conditions,such as:gas mixture composition, i.e.SiH₄/N₂ ratio and SiH₄/H₂ ratio, heater temperature, gas pressure and the RF plasma power.An influence of the technological parameters on the ratio of the deposition process as well as the quality, chemical composition and atomic-scale structure of the layers has been carefully determined.In the analysis SEM, EDS and FTIR methods have been applied.Finally a role of hydrogen diffusion into the silicon has been analysed and the passivation ability of the layers has been evaluated.

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1. Amorphous carbon layers on polymeric substrates.
2. Stability of a-CN_x:H layers deposited by plasma enhanced CVD