Diamond-like layers doped with nitrogen (a-CN_x:H) on metallic, ceramic and polymeric substrates receive particular attention as new-generation material for applications in engineering industry, microelectronics and medicine. They are known to be chemically resistant and to have attractive mechanical and electric properties.

The research problem is that the properties of the a-CN_x:H layers may differ in accordance to their composition (nitrogen and hydrogen content) and to atomic/micro-scale structure. Thus, any applications of a-CN_x:H in advanced technologies are conditioned by detailed knowledge of relationships between synthesis conditions and constitution of the layers.

This work reports the results concerning stability and structure of a-CN_x:H layers deposited on Si (001) using plasma enhanced RF CVD method. The series of the layers have been obtained from CH₄ and N₂ gas precursors under modified synthesis conditions. In experiment the following technological parameters have been controlled: CH₄/N₂ ratio, substrate temperature, gas pressure in the chamber and RF plasma power. The studies of the surface morphology, microstructure, chemical composition and the thickness measurements have been performed using typical tools: EDS, SEM and AFM. The atomic-scale structure has been modelled from IR spectra at 1250-4000 cm^-1. With application of the obtained results an influence has been evaluated of the technological parameters on the processing efficiency, including deposition ratio and quality of the material. It has been confirmed that high temperature may exert destructive effect. It may be partially compensated by increase of either gas pressure or RR power or both. Taking all found relationships as a basis the diagrams of stability of the layers in (p,T), (p, P_RF) and (T, P_RF) systems have been drawn.

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1. Amorphous carbon layers on polymeric substrates.
2. Amorphous a-Si_xN_y:H layers on silicon substrate for application in solar cells.