The title systems (Tl₂Te - (Zn, Cd, Hg)Te) are polythermal cross sections of respective ternary ones of the type Tl-M-Te, where M is any metal. There is a considerable probability of chemical compounds formation in such systems, while (according to former data of other authors) no compound is formed in the systems Tl₂Te-ZnTe and Tl₂Te-CdTe, and in the Tl₂Te-HgTe only one compound was found. The former data were obtained by differential thermal analysis (DTA). This is the reason why we decided to reinvestigate the systems employing another method namely common thermal analysis (TA). From our studies it appeared that in the Tl₂Te-ZnTe system one compound was formed of component molar ratio Tl₂Te : ZnTe = 9:1 melting congruently at 713 K; in Tl₂Te-CdTe two compounds: 6:1 melting congruently at 704 K and 1:3 melting incongruently at 1050 K; in the Tl₂Te-HgTe system three compounds: 5:1 melting congruently at 696 K, as well as 1:3 and 1:9 both undergoing decomposition at 653 K and 713 K, respectively.

From the comparison of above data some conclusions may be derived: 1^o tendency to compound formation in the series Tl₂Te - (ZnTe→CdTe→HgTe) increases with the increase of the metal atomic weight of the second component: one compound→two compounds→three compounds; 2^o the compound composition on the Tl₂Te side was the nearer to the pure thallium telluride, the greater stability of the second component: 9:1→6:1→5:1, respectively; 3^o the melting point of the compound decreases slightly: 713→704→696 K, respectively.

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1. Phase Diagram for the Tl₂Te - In₂Te₃ System Determined by Thermal Analysis and Concentration Cell EMF Measurements