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Determination by Raman scattering of free charge-carrier concentration in p- type CdTe

Manuel J. Soares 1Teresa Monteiro 2A. J. Neves 2M. C. Carmo 2

1. Universidade de Aveiro (UA), Departamento de FĂ­sica, Aveiro 3810-193, Portugal
2. University of Aveiro, Campus de Santiago, Aveiro 3810-193, Portugal


In this work we have measured the room temperature Raman spectra of the LO-phonon-plasmon modes of oriented CdTe samples prepared from commercially available p-type CdTe single crystals grown by vertical Bridgman process. The aim was to determine the free carrier concentration and to compare the results with other methods, namely photoluminescence (PL) and Hall effect. In the former, the energy difference between the free-to-bound and donor-acceptor transitions is used. In this paper we discuss the details of measurements and compare the results obtained by the three experimental techniques. We show that the three processes can yield similar results. While the Hall method can only be used in samples of low resistivity and requires adequate ohmic contacts and the PL method requires sample cooling, the Raman method is simpler and quicker: sample preparation is easier and experiments can be done at room temperature.


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Presentation: Poster at E-MRS Fall Meeting 2006, Symposium F, by Manuel J. Soares
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-15 10:22
Revised:   2009-06-07 00:44