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Effect of post annealing on La0.7Sr0.3MnO3 thin films
|Wang Fai Cheng , Chi Wah Leung|
The Hong Kong Polytechnic University (HK, PolyU), Hung Hom, Hong Kong, Hong Kong
Stability of La0.7Sr0.3MnO3 thin films fabricated by pulsed laser deposition has been investigated. LSMO films were deposited on (100) LAO substrates at 650 oC with the films thickness about 50 nm. The oxygen pressures used to fabricate the films were 50 and 100 mTorr. Then in situ annealing was performed at 100 and 50 mTorr, respectively. Curie temperature (Tc) of the films was estimated from the peak of the temperature dependent resistivity (RT) data. For the films deposited at 100 mTorr, Tc of the film without post annealing is about 360 K. After annealing at 50 mTorr, Tc slightly dropped for short annealing time and recover to 360 K for 30 mins annealing. Resistivity at room temperature of the film annealed for 30 mins is 2x10-5 Ωm. Resistivity change between Tc and 20 K is 85%. For the films deposited at 50 mTorr, it maintains semiconducting behaviors without transition after annealing for different time imply that films are oxygen deficient. These effects are related to the structural and chemical properties of the films.
Presentation: Poster at E-MRS Fall Meeting 2006, Symposium K, by Wang Fai Cheng
See On-line Journal of E-MRS Fall Meeting 2006
Submitted: 2006-05-15 05:32 Revised: 2009-06-07 00:44