Pr_0.7Ca_0.3MnO­₃(PCMO) thin films were prepared on (001) oriented LaAlO₃ substrate using pulsed laser deposition. Epitaxial PCMO films were grown on the substrate at 650℃ in a-150m Torr oxygen atmosphere. Resistance switching characteristics caused by electric field were investigated by using different metal electrodes, including Al, Pt, Au, Ti. The PCMO thin films exhibited switching characteristics upon changing polarity of voltage, especially with Al electrodes. The PCMO film with Al electrode showed non-linear, hysteresis current-voltage loop by applying a continuous dc voltage source and show resistance switching effect where other metals do not. We found that the total resistance of the film is dominated by interface resistance and the switching phenomenon is mainly due to the Al electrode. Such a structure can find applications in non-volatile memory devices.

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1. Effect of post annealing on La_0.7Sr_0.3MnO₃ thin films