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Correlation between nitrogen incorporation and optical quality in MOCVD-grown Ga(In)NAs investigated by photoluminescence and modulation spectroscopy.

Wojciech Rudno-Rudzinski 1Robert Kudrawiec 1Krzysztof Ryczko 1Piotr Sitarek 1Jan Misiewicz 1Joff Derluyn 2Ingrid Moerman 

1. Wrocław University of Technology, Wybrzeże Wyspiańskiego, Wrocław 50-370, Poland
2. Ghent University, Department of Information Technology (INTEC), St. Pietersnieuwstraat 41, Gent 9000, Belgium


Semiconductor structures based on Ga(In)NAs has been recently thoroughly investigated. Unique properties of such structures come from an unusual behaviour of nitrogen band and make them perfectly suitable for telecommunication devices for 1.3 or even 1.55 micron.
Technology of epitaxial growth of nitrogen-diluted structures is currently being optimised. It is difficult to incorporate more than small fractions of percent of nitrogen and at the same time to maintain high optical quality of samples.
In this work there has been studied GaNAs bulk layers and GaInNAs/GaAs Quantum Wells grown by MOCVD, with different TBAs flow. Room temperature photoreflectance and contactless electroreflectance measurements have been carried out in order to determine the energies of optical transitions. Numerical calculations in envelope function formalism has been used to ascribe the measured energies to band structure and thus to verify the nitrogen content of the well layer. Low temperature PR and PL spectra have been compared and the value of Stokes shift, as an indicator of optical quality, has been correlated with nitrogen content of the samples. Also the line broadening of PR resonances and FWHM of PL peaks has been analysed to further confirm the relation between the amount of nitrogen in the structure and its optical quality.


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Presentation: poster at E-MRS Fall Meeting 2003, Symposium C, by Wojciech Rudno-Rudzinski
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-20 11:49
Revised:   2009-06-08 12:55