Semiconductor structures based on Ga(In)NAs has been recently thoroughly investigated. Unique properties of such structures come from an unusual behaviour of nitrogen band and make them perfectly suitable for telecommunication devices for 1.3 or even 1.55 micron.
Technology of epitaxial growth of nitrogen-diluted structures is currently being optimised. It is difficult to incorporate more than small fractions of percent of nitrogen and at the same time to maintain high optical quality of samples.
In this work there has been studied GaNAs bulk layers and GaInNAs/GaAs Quantum Wells grown by MOCVD, with different TBAs flow. Room temperature photoreflectance and contactless electroreflectance measurements have been carried out in order to determine the energies of optical transitions. Numerical calculations in envelope function formalism has been used to ascribe the measured energies to band structure and thus to verify the nitrogen content of the well layer. Low temperature PR and PL spectra have been compared and the value of Stokes shift, as an indicator of optical quality, has been correlated with nitrogen content of the samples. Also the line broadening of PR resonances and FWHM of PL peaks has been analysed to further confirm the relation between the amount of nitrogen in the structure and its optical quality.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/777 must be provided.

1. Contactless electroreflectance of ZnSe layers grown by atomic layer epitaxy
2. Application of modulated spectroscopies to nitride structures
3. The nature of carrier confinement in quantum dashesof various cross-section shapes
4. Optical characterization of quantum dash based tunnel injection laser structures for 1.55 μm emission
5. Effect of the hydrostatic pressure on quantum dot - quantum well tunnel injection structures
6. Surface photovoltage spectroscopy of quantum well and quantum dot systems
7. Contactless electroreflectance spectroscopy in UV region