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Correlation between nitrogen incorporation and optical quality in MOCVD-grown Ga(In)NAs investigated by photoluminescence and modulation spectroscopy.
|Wojciech Rudno-Rudzinski 1, Robert Kudrawiec 1, Krzysztof Ryczko 1, Piotr Sitarek 1, Jan Misiewicz 1, Joff Derluyn 2, Ingrid Moerman|
1. Wrocław University of Technology, Wybrzeże Wyspiańskiego, Wrocław 50-370, Poland
Semiconductor structures based on Ga(In)NAs has been recently thoroughly investigated. Unique properties of such structures come from an unusual behaviour of nitrogen band and make them perfectly suitable for telecommunication devices for 1.3 or even 1.55 micron.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium C, by Wojciech Rudno-Rudzinski
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-20 11:49 Revised: 2009-06-08 12:55