In general, high power UV beams, or lasers are used often as activating sources in metal organic chemical vapor deposition (MOCVD). In other cases, they have been applied to anneal electronic materials such as silicon and high-k dielectric film. Hatano et al. used a pulsed KrF excimer laser (λ=248 nm) to improve both device performance and uniformity, by changing the microstructures of silicon films, where this pulse laser crystallization is an efficient technology for obtaining poly-Si TFTs[1]. Fang et al. reported that the low temperature annealing step improved leakage current densities, using UV laser (λ=222 nm)[2]. These results strongly imply that UV irradiation process can change the microstructure of a deposited film, and be effective in the low temperature surface treatment. In this work, a photo-assisted crystallization (PAC) method will be used to crystallize the phase change optical recording layer such as AgInSbTe and GeSbTe, using Xe-type UV-lamps. Furthermore, equatomic FePt or CoPt alloys have been attractive as materials for perpendicular magnetic recording media due to their advanced perpendicular magnetic properties, which comes from structural change from disordered to ordered L1₀ structure. Multilayered FePt or CoPt thin films will be annealed using the UV beam treatment to change their structural ordering with UV beam power and irradiated time.

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1. Transparent Integrated Circuit with ZnO TFT and TCO
2. Transparent thin-film transistors with zinc oxide active layer fabricated using metal zinc