Transparent oxide semiconductor materials make it possible to realize transparent electronic devices. In 2006, we reported for the first time the possibility of transparent AMOLED with ZnO TFT backplane in SID. Some companies also presented transparent AMOLED panel since 2007. But, the number of transistors for unit pixel of AMOLED is small. To realize true transparent electronics, we should integrate many TFTs together with transparent electrodes. In this meeting, highly transparent and practically integrated circuit (e.g. 47-stage ring oscillator) with ZnO TFT and TCO will be presented.

The control of threshold voltage of TFT is one of the basic conditions for integration of many TFTs. For the oxide TFT with top gate structure, we could control the threshold voltage with optimizing the back-channel interface.

To minimize the area of integrated circuit and improve the characteristics of integrated circuit, the decrease of channel length is imperative. We propose the scale down of thickness in oxide TFT could be a general solution for this problem. With the advantage of ALD process, accurate control of the thickness of deposited thin film, we could optimize the thickness of various films in the ZnO TFT for the application of constructing integrated circuit.

The resistance of transparent electrode is another big issue for maximize the transparency of integrated circuit. Actually, the metal layer has been included partially in the presented transparent AMOLED panel. The structured transparent electrode layer with the combination of oxide and thin metal layer showed that maintaining transparent and decreasing apparent sheet resistance as low as 2~5 ohm/sheet is possible.

The realization of practical transparent electronics seems likely to happen in the near future with well controlled and scale-downed oxide TFT and transparent electrode having conductivity comparable with metal layer.

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