We studied the changing of the CdTe single crystalline samples properties caused by purposive introducing of fresh dislocations by means of uniaxial compression under constant load as well as by indentation. The dislocation density (DD) increased by more than two order of magnitude after the deformation. The temperature dependences of dark conductivity in the region of 100-300 K correspond to the activation energy of E_i = 82 meV both for initial and deformed samples but the carriers concentrations increase with DD rising. The RT carriers lifetimes determined from the decaying parts of transient photoconductivity signals decreased in 2-5 times after the deformations. The shallow level E_t = 11 meV participates in the relaxation processes of the initial samples. A recombination through deep centers dominates in deformed crystals indicating that there the overcompensation took place. The analisys of the photoconductivity kinetics revealed the increase of the surface recombination centers concentration and persistent photoconductivity in the last case. The values of the transmission cut-off energy point out the optical band gap narrowing up to 8% in deformed samples. The optical absorption edges become more broadened and their temperature shifts become a little smaller with the increasing of the DD. The last facts are explained by the disordering processes and deformational goffering of energy gaps.

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