Ferromagnetic Fe-implanted 6H-SiC: new results towards Diluted Magnetic Semiconductor
|Alain Declémy 1, Michel Drouet 1, Cyril Dupeyrat 1, David Babonneau 1, Jean Mimault 1, Dominique Eyidi 1, Marie-France Beaufort 1, Jean-Paul Eymery 1, Abdeslem Fnidiki 2, Frederic Ott 3, Michel Viret 4|
1. Laboratoire de Métallurgie Physique (LMP), Bvd M. et P. Curie, Futuroscope 86962, France
In 2000, Dietl et al predicted that hole-mediated ferromagnetism with high Tc can be obtained in wide band gap semiconductors with low spin-orbit coupling. SiC is such a semiconductor and Tc up to 270 K has been observed in Fe-implanted 6H-SiC. SiC is now recognized as a good candidate for diluted magnetic semiconductors (DMS) applications, but the origin of the ferromagnetic contributions in implanted SiC is still to be determined. Recently, we have shown that interesting ferromagnetic behaviour up to room temperature has been detected in 6H-SiC multi-implanted with 57Fe+ and 56Fe+ ions at 380°C and subsequently annealed at 1000°C.A microstructural study of such ferromagnetic Fe-implanted 6H-SiC samples with Mössbauer spectroscopy and X-ray techniques has shown that strongly disordered Fe-containing regions might be responsible of the observed ferromagnetic behaviour. In this work, we propose a continuation of this study by extending the annealing temperature range from 600°C up to 1400°C. Investigation of the intimate structure on these entities and Fe location, new microstructural results and systematic characterization of their magnetic properties with Polarized Neutrons Reflectivity and magnetometry with superconducting quantum interference device and of their transport properties will be given, with the aim to contribute in deciding whether this system could really be a DMS or not.
Presentation: Poster at E-MRS Fall Meeting 2006, Symposium E, by David Babonneau
See On-line Journal of E-MRS Fall Meeting 2006
Submitted: 2006-05-12 08:34 Revised: 2009-06-07 00:44
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