In 2000, Dietl et al predicted that hole-mediated ferromagnetism with high Tc can be obtained in wide band gap semiconductors with low spin-orbit coupling. SiC is such a semiconductor and Tc up to 270 K has been observed in Fe-implanted 6H-SiC. SiC is now recognized as a good candidate for diluted magnetic semiconductors (DMS) applications, but the origin of the ferromagnetic contributions in implanted SiC is still to be determined. Recently, we have shown that interesting ferromagnetic behaviour up to room temperature has been detected in 6H-SiC multi-implanted with ⁵⁷Fe⁺ and ⁵⁶Fe⁺ ions at 380°C and subsequently annealed at 1000°C.

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