We performed the complex investigations of the non-stationary photoconductivity processes for undoped and Cl-doped (N_Cl=10¹⁷-5∙10¹⁹ cm^-3 in the charge) CdTe single crystals grown by modified PVT. For the first time the CdTe photoconductivity kinetics measurements in the temperature region as wide as T=10-325 K were made. Numerical analysis of the decaying parts of photoconductivity signals revealed that the experimental curves are well fitted with a sum of two exponents with relaxation times τ₁ and τ₂ at lower temperatures. When the temperature increases the contribution of the second component reduces and at RT becomes negligible compared with the rapid one. Concentration dependences of the relaxation constants were also studied. Low-resistivity undoped CdTe is photosensitive in a narrow temperature range (30-60 K). τ₁ values of moderately and highly doped samples decrease from more than 40 μsec at 10 K to about 3-4 μsec at 100-150 K and remain practically constant with further temperature increasing. The τ₁(T) dependence of low-doped crystals (N_Cl = 10¹⁷ cm^-3) has a complex character: rapid falling (from 30 μsec at 10 K to 2 μsec at 70 K) followed by raising to the initial value in the vicinity of 150 K and then decreases again to less than 10 μsec but more slowly. The observed peculiarities are explained by the rebuilding of the CdTe defect structure as a result of doping with Cl.

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