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Vapour phase growth and characterisation of Cl-doped cadmium telluride single crystals

Volodymyr D. Popovych 2Igor Virt 2Dmytro I. Tsutsura 2Myron F. Bilyk 2Zenoviya F. Tsybriy 1Larysa V. Darchuk 1Fedir F. Sizov 1

1. Institute of Semiconductor Physics NAS Ukraine, Kyiv, Ukraine
2. Drohobych State Pedagogical University, Grushevski 117-1, Drohobych 82106, Ukraine

Abstract

A vapour phase method and growth set-up for the pure and Cl-doped CdTe single crystals preparation are described. The optical quality of as-grown crystals was investigated by infrared transmission microscopy over a wide range of wavelengths. It was revealed that their optical and electrical properties depend on the doping level. Undoped and low-doped (Cl concentration NCl=1017 cm-3) materials transmittance is high enough (larger than 60% in the wavelenght range of 2-25 μm) but their resistivity does not exceed 106 Ω cm. When the chlorine concentration increases the crystals become semiinsulating (>108 Ω cm). But the reduction of transmittance was observed for heavily doped (NCl>1019 cm-3) crystals. Their calculated extinction coefficients yield power law dependence on photon energy in the short wavelength range of the spectra. The calculated scattering coefficients correlate well with the concentration and size distribution of the second phase inclusions determined by means of chemical etching technique and by SEM.

 

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Presentation: poster at E-MRS Fall Meeting 2004, Symposium F, by Volodymyr D. Popovych
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-28 17:15
Revised:   2009-06-08 12:55