Significant progress in the nanoelectronic can be achieved at usage of efficient and low-cost technologies that allow the growth of thin films with good crystalline structure of semiconductor multicompound materials. Among varieties technologies that are used for growth of ZnTe films the Pulsed Laser Deposition (PLD) method is a highly efficient and flexible thin-film growth method. The energetic nature of the ablated species enhances the PLD process, potentially enabling deposition of high quality films on substrates at significantly reduced temperature. This paper is devoted to optimization of PLD growth condition of ZnTe films on various substrates and subsequent investigation of relevant parameters of growth process, structural, morphological and optical properties of grown films. Study the effect of growth parameters on the structural quality and properties of grown films were carried out. X-ray diffraction measurements showed that the ZnTe films, which have been deposited at optimal substrate temperatures, were characterized by a (111) preferred orientation with large average grain size. The surface morphology as function of the substrate temperature was investigated. We found that morphological properties of ZnTe films show a strong dependence on the growth temperature. The effects of subsequent deposition conditions on the optical properties of pure ZnTe thin films were studied. The optical transmission and reflectance in the energy range 1,5-5,5 eV for films grown at various substrate temperatures were measured. We calculated the variation in the absorption coefficient with the photon energy from the transmittance spectrum for samples grown at various substrate temperatures. Obtained data were analyzed and value of the absorption coefficient, for allowed direct transitions, was determined as a function of photon energy.

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