Zinc oxide is one of the most important II-IV compound semiconductors with a wide bandgap of about 3.37 eV at room temperature which can be used in a number of optoelectronic devices (UV photodetectors, light emitting diodes, laser diodes, gas-sensors) [1].

This work is devoted to experimental research of the photoluminescence features of ZnO nanopowder (d~30÷40 nm) doped by impurities of  Mn, Ti, Cr, V (~2÷3 at. %). Doping was accomplished by the method of  thin film (h~5÷8 nm) laser deposition  of the doping material onto nanopowder followed by  laser implantation and activation of the doping impurity [2].

For initial ZnO at a room temperature intensive ultraviolet (λ_max=387 nm) and yellow-orange luminescence (λ_max=600 nm)  was observed and also a weak radiation in the green range  of the spectrum (λ_max=510 nm). A decrease of the intensity of the yellow luminescence in comparison with undoped material and the occurrence of a new luminescence maximum (λ_max=535 nm) in zinc oxide doped by Cr and Ti has been observed .  In  ZnO:Ti appears also a green luminescence with λ_max=525 nm, which could be the result of a formation of TiO₂ particles in the nanopowder . Doping of zinc oxide by Mn and V leads to a significant  increase of the intensity of the yellow luminescence which can be  used effectively for the increase of the sensitivity in  gas detection.

[1] Zinc Oxide Bulk, Thin Films and Nanostructures. Processing, Properties and Applications. Edited by: Chennupati Jagadish and Stephen Pearton (2006).

[2] В.K.Kotlyarchuk, D.I.Popovych, A.S.Serednytski, I.F.Myronyuk. Features of Photoluminescent Properties of Doped ZnO Nanopowders // COLA 2007, 9th International Conference on Laser Ablation, September 24-28, 2007, Tenerife, Spain, PTU-73.

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1. Pulsed Laser Deposition of High Quality ZnTe Films Intended for Creating Low-Dimensional Semiconductor Heterostructures
2. Photoluminescent properties of oxide nanopowders synthesis by pulsed laser evaporation
3. Investigation of ZnTe thin films grown by Pulsed Laser Deposition method
4. Reactive Pulsed Laser Deposition of Doped Zinc Oxide Films as Emitting Layers of Thin Film Electroluminescent Devices