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Grain Boundary Phase Transitions and Pressure Effect

Boris Straumal 

Russian Academy of Sciences, Institute of Solid State Physics, Chernogolovka 142432, Russian Federation

Abstract


The pressure dependence of the mobility of individual <001> grain
boundaries (GBs) in Sn bicrystals has been studied. For six GBs
studied the activation energy, the pre-exponential factor, and the
activation volume of the migration were determined. It was found that
all the migration activation parameters vary in the same way with the
misorientation angle, and their minima correspond to special GBs.

The pressure influence on the diffusion of In along individual Sn/Ge
interphase twist boundaries (IBs) <001> is studied. The activation
volume for the diffusion of In in the bulk and along IBs is
determined. A baric "compensation" effect was observed: at the
pressure of about 8.3 kbar the diffusion coefficients for all
interphase boundarics studied were identical.

The influence of high hydrostatic pressure on the GB wetting has been
studied in the (Fe-Si) -Zn system. Bicrystals of Fe-6 at.% Si and
Fe-12 at.% Si alloys were used. The dihedral angle q at the
intersection of the GBs with the solid/liquid interface has been
measured by light microscopy. The transition from complete (q = 0) to
partial (q > 0) wetting of the GB by the Zn-rich melt (dewetting
phase transition) has been found to occur as the pressure increased.
The dewetting transition pressure is higher for the special GBs than
for the general ones and decreases with increasing of the Si content
in the alloy. The solidus concentration of Zn in the Fe-Si solid
solution have been determined at various pressures. Three-dimensional
phase diagrams in the coordinates "Zn
concentration-temperature-pressure" and "Zn concentration-Si
concentration-pressure" with the surfaces of GB wetting/dewetting
phase transitions have been constructed.

 

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Related papers

Presentation: - at High Pressure School 1999 (3rd), by Boris Straumal
See On-line Journal of High Pressure School 1999 (3rd)

Submitted: 2003-02-16 17:33
Revised:   2009-06-08 12:55