The pressure dependence of the mobility of individual <001> grain boundaries (GBs) in Sn bicrystals has been studied. For six GBs studied the activation energy, the pre-exponential factor, and the activation volume of the migration were determined. It was found that all the migration activation parameters vary in the same way with the misorientation angle, and their minima correspond to special GBs.
The pressure influence on the diffusion of In along individual Sn/Ge interphase twist boundaries (IBs) <001> is studied. The activation volume for the diffusion of In in the bulk and along IBs is determined. A baric "compensation" effect was observed: at the pressure of about 8.3 kbar the diffusion coefficients for all interphase boundarics studied were identical.
The influence of high hydrostatic pressure on the GB wetting has been studied in the (Fe-Si) -Zn system. Bicrystals of Fe-6 at.% Si and Fe-12 at.% Si alloys were used. The dihedral angle q at the intersection of the GBs with the solid/liquid interface has been measured by light microscopy. The transition from complete (q = 0) to partial (q > 0) wetting of the GB by the Zn-rich melt (dewetting phase transition) has been found to occur as the pressure increased. The dewetting transition pressure is higher for the special GBs than for the general ones and decreases with increasing of the Si content in the alloy. The solidus concentration of Zn in the Fe-Si solid solution have been determined at various pressures. Three-dimensional phase diagrams in the coordinates "Zn concentration-temperature-pressure" and "Zn concentration-Si concentration-pressure" with the surfaces of GB wetting/dewetting phase transitions have been constructed.
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