High-pressure technique is the promising method that allows to obtain
new amorphous materials in a bulk form, but physical mechanisms of
this process are not explained fully up to now. Analysis of
experimental data on amorphous semiconductors undergoing
high-pressure treatment shows that the amorphization passes
through the intermediate stressed metastable phase. The system in
this state is far from equilibrium and the amorphization could be
considered as a process of the stress relaxation in disordered
matrix. Following this idea, the simple non-linear model of solid
state amorphization based on the deformation field due to
structural defects of the disordered matrix was proposed. The
dependence of the autowave velocity on the various diffusion
regimes and model parameters was studied. For the experimental
parameters, corresponding to semiconductors undergoing
amorphization by high-pressure treatment, a solution in the form
of a self-sustaining wave is obtained. Dissipative structures that
appear in the vicinity of the wave instability as well as the wave
stability region are analysed in detail. The financial support
from the Alexander von Humboldt Foundation is acknowledged.

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