Highly doped Czochralski silicon is used as substrate material for fabricating n/n+ and p/p+ epitaxial structures in integrated circuits (ICs). During the growth of highly doped Si by the Czochralski method, dislocations may occur. Dislocations are unwanted since they can lead to a polycrystalline structure. The aim of the work is to analyze the dislocation formation and evaluate characterization methods for highly doped silicon.

1. POSTER: Formation of dislocations in highly doped n-type Czochralski silicon, PDF document, version 1.5, 0.9MB

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