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Influencing the crystallization behaviour of multi crystalline silicon in a R&D furnace
|Iven Kupka 1, Christian Reimann 2, Jan Seebeck 2, Toni Lehmann 1, Ulrike Wunderwald 1, Jochen Friedrich 2, Kaspars Dadzis 3, Frieder Kropfgans 3, Lamin Sylla 3|
1. Technologiezentrum Halbleitermaterialien, Freiberg 09599, Germany
For a further improvement of the industrial crystallization process of multi crystalline silicon for PV application it is necessary to gain a fundamental understanding of the initial nucleation process of silicon on the crucible bottom, the subsequent grain selection process and the final grain growth behaviour over the crystal height. These phenomena have to be understood to decrease the amount of recombination active regions especially in form of harmful dislocation clusters and therefore to increase the resulting solar cell performance.
Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 4, by Iven Kupka
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Submitted: 2013-03-28 16:28 Revised: 2013-03-28 16:41