A wide application of SiC in high-power, high-temperature, high-frequency and strong-radiation electronics is determined by its excellent physical properties. Although physical vapor transport (PVT) method has been widely used to produce SiC bulk crystals since 1970s, several issues such as reducing thermal stress and increasing growth rate remain unsolved. In PVT method, radio frequency induction heating is adopted to generate enough required heat for crucible in order to obtain a proper temperature distribution inside the crucible for higher growth rate, lower thermal stresses and lower energy consumption, etc. So it is very important to study the effects of parameters of induction heating, such as coil position and electrical frequency, on thermal field inside crucible.


In this study, a 2-D numerical global model is applied to investigate effects of induction heating system on silicon carbide crystal growth. Firstly, the coupled equations for electromagnetic field, conductive and radiative heat transfer are solved by a finite element method (FEM) to predict electromagnetic and thermal field, in which induction heating, heat conduction and radiative heat exchange are taken into account. Then based on the thermal field, the growth rate is calculated by solving Hertz-Knudsen equation and one-dimensional mass transfer equation. Further, models with several different radial coil positions and models with different electrical frequency are carried out to investigate the relationship between coil design and temperature distribution while the temperature of monitoring point is fixed at 2300K. The predicted growth rate along the substrate surface for each model is also compared and discussed.


The results show that the temperature distribution inside the crucible and the growth rate are affected by the radial coil position and frequency. Finally, based on the analysis of simulation results, one reasonable range of radial coil position and frequency to make compromise between higher growth rate, lower electrical power consuming, more stable operation of SiC powder and lower thermal stresses in grown crystal is obtained.

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1. Numerical analysis of multi-phase flow in the sublimation growth of SiC crystal by a 2-D incompressible kinetic model