Wide-band gap silicon carbide (SiC) is a promising semiconductor material for electronic and optoelectronic devices working in many extreme conditions, such as high temperature, high frequency, high power and intensive radiation environments. The physical vapor transport (PVT) method has been one of the most successful and common method for growth of bulk SiC crystals. During the process of SiC crystal growth by PVT, primary particles in the crucible transport from SiC powder surface to crystal growth surface and grow the SiC crystal, which is very important control process of the crystal growth. So it is necessary to study the multi-phase flow and particle transport inside the crucible for growing SiC crystal with large-size and high-quality.

In present paper, a two-dimensional incompressible growth kinetic model is developed to optimize the growth process and design the growth furnace for large-size SiC crystals. In this model, flow coupling between argon gas and vapor species, Stefan effect and buoyancy effect are considered. The gas flow and species concentration in the crucible are simulated by this model, and then based on the species concentration, the growth rate is also obtained. Firstly, the effect of three main vapor species in the crucible, namely Si, Si2C and SiC2 on growth rate at different growth temperatures is investigated. It is found that the effect of Si2C on growth rate is significant when growth temperature is below 2600 K, while the effect is weakened as the growth temperature continue to increase. Therefore, we can conclude that the effect of Si2C on growth rate can not be neglected in numerical models, as the growth temperature is below 2600 K, while it can be neglected completely as the growth temperature is beyond 2680 K. Furthermore, the flow patterns of convection and diffusion in the growth furnace at different total pressures and growth temperatures is also analyzed. As the results shown, the effects of convection on transport of vapor species are significant at high growth temperature and low total pressure, so it should be considered in numerical models. The results of this study may lead to the development of effective methods for producing SiC single crystals with large-size and high-quality.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/28824 must be provided.

1. Numerical design of induction heating in the PVT growth of SiC crystal
2. Probing local symmetry changes in LaMnO_3.12 rhombohedric-orthorhombic phase transition