Combustion synthesis of Si-related crystalline nanostructures

Michał Soszyński ,  Olga M. Łabędź ,  Andrzej Huczko 

Warsaw University, Faculty of Chemistry, Pasteura 1, Warszawa 02-093, Poland


    The unique technique of Self-Propagating High-Temperature Synthesis SHS [1] provides efficient, energy autogenic route to produce a variety of new materials, often nanostructured, nonstoichiometric or involving new phases, resulting from a fast reaction in a mixture of strong oxidant/strong reducer [2]. This is due to the specific process conditions - high temperature and pressure gradients, short reaction times and a very rapid "quenching" of gaseous reaction products. This presented efficient method includes here a production of at least gram quantities of silicon carbide nanowires (SiCNWs) (Fig. 1. A,B). Silicon carbide - due to its unique physical and chemical properties - is the primary representative of refractory ceramics with many practical applications [3,4]. The characteristics of this rapid process also make it possible to obtain other unusual materials such as silicon nanowires (Fig. 1. C,D).


            Fig. 1. SEM: SiCNWs morphology (A,B) and Si nanowires (C,D).

    Efficiency of combustion synthesis depends on many parameters such as, for example: the atmosphere, the type, quantity and composition of the reactants and the initial pressure [2,5].  The authors present here the results of the parametric synthesis of SiCNWs and the preliminary studies on the preparation of silicon nanowires.

ACKNOWLEDGEMENTS: This research has been supported by the National Science Center founds awarded on the basic of decision No DEC-2011/03/N/ST5/04726 and 2011/03/B/ST5/03256 The SEM images were obtained using the equipment purchased within CePT Project No.: POIG.02.02.00-14-024/08-00.

[1] Huczko A., M. Szala, A. Dąbrowska, Synteza Spaleniowa Materiałów Nanostrukturalnych, Wydawnictwa Uniwersytetu Warszawskiego, Warszawa, 2011
[2] Soszyński M., Dąbrowska A., Bystrzejewski M., and Huczko A., Crystal Research and Technology 12, 1241 (2010).
[3] Seyller T., Appl. Phys. A 85, 2006, 371
[4] Lebedev A., Sbruyev C., Elektronika (ros.) 5, (2006), 28.
[5] Soszyński M., Dąbrowska A., and Huczko A., Phys. Status Solidi B 248, 11, 2708–2711 (2011).

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Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 8, by Olga M. Łabędź
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-15 16:11
Revised:   2013-04-15 16:11
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