Electric field and temperature introduced dielectric permittivity of [110]-oriented 65Pb(Mg_1/3Nb_2/3)O₃-35PbTiO₃ (PMN-PT65/35) single crystal near morphotropic phase boundary (MPB) was investigated by C-V curves and temperature dependent dielectric permittivity. Dielectric permittivity showed great dependence with DC bias field: when the applied DC bias field was below a threshold value, dielectric permittivity enhanced with elevated DC bias field and larger hysteresis was observed with higher DC field when it returned to the initial negative electric field, it attributed to the higher domain wall motion/switch ability at an intermediate electric field; when the applied DC bias field exceed the threshold value, dielectric permittivity first increased with an increasing DC bias field, then a decrease, forming a peak at the threshold field, due to the higher domain stability and field-introduced-phase transformation. Dielectric permittivity of poled single crystals was much lower than unpoled one at room temperature without DC bias field However, as temperature increased, dielectric permittivity of poled samples exhibited an abrupt enhancement at about 50^oC and reached much higher value than that of unpoled one, indicating a Rhombohedral-Orthohombic (R-O) phase transformation. The lower domain wall density and temperature introduced R-O phase transformation for poled samples might account for the temperature dependent dielectric anomaly.  

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