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Flux growth and characterization of PLZST relaxor antiferroelectric single crystal with MPB composition

Qiang Li 1,  Yuanyuan Li 1,  Yiling Zhang 2,  Jinghan Gao 1,  Fangping Zhuo 1,  Qingfeng Yan 1,  Xiaoqing Xi 2,  Xiangcheng Chu 2

1. Department of Chemistry, Tsinghua University, Beijing 100084, China
2. State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China

Abstract
  The Pb (Zr, Sn, Ti)O3 family of perovskite antiferroelectrics, modified with La, has attracted much attention in recent years because of its high electric-field-induced longitudinal and volume strains close to the morphotropic phase boundary (MPB) between the antiferroelectric tetragonal [AFE] and ferroelectric rhombohedral [FE] phases.[1,2] However seldom learned its electrical and optical properties while polarized from AFE to FE phase. In order to understand the influence of phase structure and domain on the transition and polarization behaviors, La doped antiferroelectric Pb(Zr, Sn, Ti)O3 (PLZST) single crystals with MPB composition have been grown by an optimized flux method in our lab.[3] PbO-PbF2-B2O3 is proved more effective for growing lead-based perovskite crystals than formal PbO-B2O3 flux. PbF2-evaporation-dependent was considered as the result of larger size PLZST single crystal growth in PbO-PbF2-B2O3 flux system. Mass loss and growth produces investigations indicate that the compositions of as-grown crystals are strongly influenced, but can be adjusted by changing the ratio of starting materials. Domain structure of PLZST single crystal, with MPB composition, is studied by in situ polarized light microscope (PLM) at various P/A & different temperature. Wavelength-dependent optical transmission spectrum analysis, from 0.2 to 12.0 μm, indicates that as-grown PLZST single crystal exhibits a higher optical transmittance from the ultraviolet to near infrared region. The broader optical transparency region in PLZST crystal suggests that it can be introduced as a promising optical crystal in antiferroelectric devices.

Reference

1. 1.Nengneng Luo, Yuanyuan Li, Zhiguo Xia and Qiang Li, CrystEngComm, 14(2012), 4547–4556.

2.Yuanyuan Li, Qiang Li, Qingfeng Yan, Yiling Zhang, Xiaoqing Xi, Xiangcheng Chu and Wenwu Cao, Appl. Phys. Lett., 101 (2012), 132904152.

3.Zi Yang, Qiang Li, Yuanyuan Li, Shaofeng Zhang and Lin Wang, J. Mater. Sci., 47(2012), 8007-8012

 

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Presentation: Invited oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 6, by Qiang Li
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-12 16:50
Revised:   2013-07-23 18:21