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Modeling of Particle Engulfment during the Growth of Multicrystalline Silicon for Solar Cells |
Yutao Tao , Andrew Yeckel , Jeffrey J. Derby |
University of Minnesota, Chemical Engineering and Materials Science, 421 Washington Ave. S.E., Minneapolis, MN 55455, United States |
Abstract |
With a reasonable balance between cost and efficiency, multicrystalline silicon (mc-Si) has been a mainstream material for solar cells, and these cells make up approximately 50% of the market of today’s photovoltaics industry. There are significant opportunities for increasing quality and reducing cost of the mc-Si substrate material via a better understanding of crystal growth processes. One challenge is the formation of silicon carbide and silicon nitride precipitates in the melt due to carbon and nitrogen impurities coupled with their relatively small segregation coefficients. These solid particles can be engulfed by the solidification front to form inclusions in the mc-Si solid. The presence of inclusions lowers cell efficiency and can lead to wafer breakage and sawing defects, even breakage of the wire saw. |
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Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 1, by Jeffrey J. DerbySee On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17 Submitted: 2013-03-27 18:11 Revised: 2013-03-27 18:19 |