Large, single crystals of cadmium zinc telluride (CZT) are needed for portable, low-cost, and sensitive devices to detect radioactive materials.  However, CZT is a particularly difficult material to grow, and advances in growth methods are needed.  

Recently, the application of traveling magnetic fields (TMF) has garnered attention for its promising outcomes in many semiconductor melt growth systems.  The application of TMF produces Lorentz forces through the molten phase, and these forces can be tuned in magnitude and spatial orientation to profoundly impact melt flows.  In turn, these flows modify heat and mass transfer, influencing the shape of the melt-solid interface and segregation along the interface.  Since the applied TMF can be instantaneously changed, it provides for a potentially ideal control action, if its complicated effects can be predicted and understood.

In this presentation, we employ fundamental mathematical models solved via finite element methods to assess the impact of TMF applied to Bridgman crystal growth processes.  In particular, we aim to assess the potential of TMF to improve CZT growth.  We discuss the mathematical formulation of our TMF analysis and, more importantly, our initial results on the effects of TMF applied to a prototypical CZT growth system.

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Supported in part by DOE/NNSA, DE-FG52-08NA28768, the content of which does not necessarily reflect the position or policy of the United States Government, and no official endorsement should be inferred.

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1. A Comprehensive Model of the Growth of Cadmium Zinc Telluride (CZT) by the Traveling Heater Method (THM)
2. Modeling the Migration of Tellurium-Rich, Second-Phase Particles in Cadmium Zinc Telluride (CZT) via Temperature Gradient Zone Melting (TGZM)
3. Modeling of Particle Engulfment during the Growth of Multicrystalline Silicon for Solar Cells
4. Modeling the Migration of Tellurium-Rich, Second-Phase Particles in Cadmium Zinc Telluride (CZT) via Temperature Gradient Zone Melting (TGZM)
5. Combined interface attachment kinetics and transport phenomena in large scale solution growth systems
6. The Horizontal Ribbon Growth Process for Solar Silicon: Analysis of Stability and Segregation
7. Toward Controlling Interface Shape during Bridgman Crystal Growth: Past, Present, and Future
8. Analysis of Scintillator Crystal Production via the Edge-Defined Film-Fed Growth Method
9. Analysis of the Nonlinear Behavior of Detached Bridgman Growth in Microgravity
10. Modeling of Particle Engulfment during the Growth of Multicrystalline Silicon for Solar Cells
11. A Comprehensive Model of the Growth of Cadmium Zinc Telluride (CZT) by the Traveling Heater Method (THM)
12. Modeling the Migration of Tellurium-Rich, Second-Phase Particles in Cadmium Zinc Telluride (CZT) via Temperature Gradient Zone Melting (TGZM)