The effect of boron concentration on sidewall facet formation at SiO₂/Si interface during in-situ doping silicon selective epitaxial growth was investigated using a standard production Chemical Vapor Doposition(CVD) reactor. Cross sectional SEM analysis revealed that films grown through oxide contacts with (110) sidewall orientations exhibit not any facets in case of high boron concentration(>1e²⁰/cm³), but typically (111) facets are well defined at low boron concentration(<1e¹⁹/cm³). In order to find the cristical limits of process conditions degrading crystalline quality, B₂H₆ gas flow rate, HCl gas flow rate and temperature were varied. Consequently degradation of crystalline quality must be because of boron dopants which impede the growth of the epitaxial layer and facilitate the formation of extended defects.

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