Development and production of new materials and their application in various branches of microelectronics and microsystem technology require information on their structural perfection. Of crucial importance are structural properties and their relations to technological steps involved with their production. Moreover, the investigation of structure-property relationships for component as well as entire devices is needed.
Beside laboratory methods a reliable availability of experimental set-ups/stations at SR sources with unique properties (high intensity, small focus, high brilliance, good coherence of radiation) opens up advanced possibilities for nondestructive material characterization and for nondestructive testing of components of applied and industrial research labs. The talk gives an overview illustrating x-ray imaging inspection and defect analysis in this context by results from microelectronics and microsystem technology, such as

-ultra-thin Si for smart wafers, macrodefects in GaAs, dislocation density mapping
-growth and quality of GaN-ELO structures on sapphire and SiC
-metallization layers: stress migration in Cu conducting lines
-lasers: deformation fields in high-power laser bars
-interconnection technology: inspection of Al and Au wire bonding in glop-tops
-flip-chip technology: inspection of solder bumps in sensor arrays and pixel detectors
-microfluidics: hydrodynamical permeability of microfilters
-MOEMS (micro-opto-electro-mechanical structures): stress in micro-mirror arrays

Imaging techniques of absorption-, phase- and diffraction contrast (holo-tomography, micro-diffraction, rocking curve imaging) are employed. Results of computed laminography are reported which was developed and implemented with SR for the first time and can be considered as a successful extension of 3D imaging to flat, laterally extended devices such as microelectronic circuit boards. Conclusions for requirements to future detector development will
be given.

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1. Imaging defects during growth of seeded directionally solidified mono-like silicon for photovoltaic applications
2. Investigation of strain and lattice parameters distribution in epitaxial laterally overgrown InGaN/GaN structures 
3. Advances in synchrotron based imaging with hard X-rays
4. X-ray imaging of semiconductor micro- and nanostructures in real and reciprocal space