We will review recent progress in the molecular beam epitaxy of telluride nanostructures achieved in the Institute of Physics. This will cover two areas of nanostructures: nanowires and n-type modulation doped quantum wells.

The growth of ZnTe, ZnMgTe and ZnMnTe nanowires was performed on the GaAs substrates covered with Au nanocatalysts. Raman experiments revealed the shift and splitting of the observed lines which is comparable to that expected for the 3D mixed crystal with composition equal to the composition of NWs estimated based on their lattice constant. The temperature variation of the internal Mn²⁺ luminescence transition provides strong evidence that Mn²⁺ ions in our Zn_1-xMn_xTe NWs are located at tetrahedral lattice sites.

 Careful optimization of the growth procedures and structure design have lead to a significant improvement of the quality of CdTe-based structures containing 2DEG. Low temperature Hall mobility as high as 400 000 cm²/Vs was observed after the illumination. The exceptional quality of nanostructures was also proven by the observation of fractional quantum Hall effect (FQHE) at mK temperatures and high magnetic fields not only in CdTe- but also in Cd_1-xMn_xTe-QWs, with effective electron g-factor as high as 300. To our knowledge this is the very first observation of FQHE in II-VI semiconductor materials.  

^*Work done in collaboration with E. Janik, W. Zaleszczyk, G. Karczewski, P. Dłużewski, S. Kret, W. Szuszkiewicz, E. Dynowska, J. Domagała, M. Aleszkiewicz, L.T. Baczewski, A. Petroutchik, A. Presz, J. F. Morhange, H. Kirmse, W. Neumann, W. Caliebe, M. Wiater, V. Kolkovski, T. Wojciechowski, C. Betthausen, A. Voge, W. Wegscheider, D. Weiss, J. Kunc and M. Potemski.

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1. Neutron scattering studies of short-period MnTe/ZnTe superlattices: magnetic order, magnon propagation and confinement
2. 1D ZnO-based structures obtained by thermal oxidation of ZnTe and ZnTe/Zn nanowires
3. Raman spectroscopy of ZnTe-based nanowires grown by MBE ^*
4. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires