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Nano-Oxidation of Superconducting Flux Flow Transistor Using a Conductive Atomic Force Microscope Tip

Seokcheol Ko 2Byoung-Sung Han 2Sung-Hun Lim 1Hyeong-Gon Kang 4Haeseong Lee 3

1. Chonbuk National University, Research Center of Industrial Technology, Engineering Research Institute, 664-14, Duckjin-Dong 1 Ga, Jeonju 561-756, Korea, South
2. Chonbuk National University, Division of Electronics and Information Engineering, 664-14, Duckjin-Dong 1Ga, Jeonju 561-756, Korea, South
3. Korea Basic Science Institute, Jeonju Branch, 664-14, Duckjin-Dong 1Ga, Jeonju 561-756, Korea, South
4. Chonbuk National University, Basic Science Research Institute, 664-14, Duckjin-Dong 1Ga, Jeonju 561-756, Korea, South


The atomic force microscope (AFM) has exhibited its capbility to fabricate the nano-scale electronic devices. We have fabircated superconducting flux flow transistors (SFFTs) using superconducting thin films. The SFFT, which is composed of two stripe lines is characterized as a transresistance device: one stripe is as a source and drain terminal, the other is as a gate termianl. The important process is to fabricate a channel with sufficient reproducibility and controllability in fabricating SFFT. Generally, the channel of SFFT has been fabricated by the chemical wet etching methods and dry etching method. In this study we present a new fabrication of multi-channels SFFT using the artificial pattern formation method based on the AFM nano-oxidation process. The critical current density in the multi-channels of the fabricated SFFT was decreased by the applied current in a control current line. Comparing the measured with theoretical results, it is shown that the critical current of SFFT with two channels is larger than the critical current of single channel due to the magnetic coupling between channels.


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Presentation: poster at E-MRS Fall Meeting 2004, Symposium E, by Seokcheol Ko
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-29 18:04
Revised:   2009-06-08 12:55