Search for content and authors

Current-Voltage Characteristics of Superconducting Flux Flow Transistor with Multi-Channel Fabricated by Inductively Coupled Plasma

Seokcheol Ko 1Byoung-sung Han 1Hyeong-Gon Kang 2Hyo-Sang Choi 4Myoungho Choi 3

1. Chonbuk National University, Division of Electronics and Information Engineering, 664-14, Duckjin-Dong 1Ga, Jeonju 561-756, Korea, South
2. Chonbuk National University, Basic Science Research Institute, 664-14, Duckjin-Dong 1Ga, Jeonju 561-756, Korea, South
3. Kwangju Health College, Department of Medical Information Engineering, 683-3, Sinchang-dong, Gwangsan-gu 506-701, Korea, South
4. Chosun University, Department of Electrical Engineering, 375, Seosuk-Dong, Dong-Gu 501-759, Korea, South


In this paper, we have fabricated superconducting flux flow transistor (SFFT) with two and three channels from epitaxial YBa2Cu3O7-δ thin films with thickness 350 nm and channel width 9 um and length 5 um by an Inductively Coupled Plasma (ICP). We improved the characteristics of the SFFT by forming multi-channels in the body current line. We performed the experiments and simulation of SFFTs controlled by the magnetic field generated by a gate current, which regulates the critical current through the weak link of the body current line and the gate current. We also explained the process to get the I-V characteristic equation and to induce the external and internal magnetic field by Biot-Savart’s law. The experimental results are in good agreement with simulation results. It is shown that due to the magnetic coupling between channels, the critical current of a SFFT with three channels is larger than the critical current of two channels in this study.


Legal notice
  • Legal notice:

Related papers

Presentation: poster at E-MRS Fall Meeting 2004, Symposium E, by Seokcheol Ko
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-29 16:05
Revised:   2009-06-08 12:55