Computer modeling of nanocables structure like SiC@BN

Anatoly Lisenko 1Valeriy V. Kartuzov 1Valeriy L. Bekenev 1Natalia N. Rozhenko 1Petr M. Silenko 1Pavel N. D'yachkov 2

1. Frantsevich Institute for Problems of Materials Science (IPMS), 3, Krzhizhanivsky Str., Kiev 03680, Ukraine
2. Kurnakov Institute of General and Inorganic Chemistry RAS (IGIC), Leninsky prospect, 31, Moscow 119991, Russian Federation


In conjunction with intensive development of 1D nanomaterials, an interest to technological design of composite materials, namely, nanocables representing nanotube with inner rod has been raised. Silicon carbide is well known with its semiconductive property that is why a development of nanocables SiC@BN is very promising for microelectronic and sensor equipment. This effort is to perform a theoretical investigation of different models of nanocable SiC@BN, in particular, geometry and structure of nanorod SiC, dimensional effects, electron structure, and energy of atoms bond, distribution of electron charge as well as influence of chirality of nanotube BN on electroconductive properties of nanocable.

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Presentation: Poster at E-MRS Fall Meeting 2009, Symposium I, by Anatoly Lisenko
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-08 15:47
Revised:   2009-06-07 00:48
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