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Passivation effect of CdS thin films grown by Chemical Bath Deposition on gallium antimonide surfaces

Renaud CAILLARD 3Osvaldo O. Vigil-Galán 3Ernesto Dieguez 3Alfredo Cruz-Orea 1Francisco Cruz-Gandarilla 2Jorge Aguilar-Hernandez 5Gerardo Contreras-Puente 5Aimée Arias-Carbajal 4

1. Departamento de Física, Centro de Investigación y de Estudios Avanzados del IPN, A.P. 14-740,, México 07360, Mexico
2. Instituto Politécnico Nacional, ESFM, Depto. de Ciencia de Materiales, Unidad Prof. ALM (ESFM), Edif. 9, Zacatenco, México, Zacatenco, México 07338, Mexico
3. Laboratorio de crecimiento de cristales, Dpto Fisica de materiales, Facultad de ciencias, UAM (LCC, UAM), cantoblanco, Madrid, Madrid 28049, Spain
4. Facultad de Química - IMRE,Universidad de La Habana, Vedado, C.P. 10400, Cuba. (IMRE), Vedado, Cuba C.P. 10400, Cuba
5. Escuela Superior de Física y Matematicas, Mexico D.F., Edificio No. 9 U.P.A.L.M. Lindavista, México 07738, Mexico

Abstract

CdS thin films with different amount of sulphur have been grown by chemical bath deposition method on GaSb single crystal substrates in order to study the passivation of gallium antimonide surface as a function of the nominal ratios concentration c(thiourea)/c (CdCl2) in the solution. The techniques used to investigate the passivation effects include photoacustic (PA) and photoluminescence (PL). Atomic force microscopy (AFM) and x-ray diffractometry were also used to correlate the results obtained from PA and PL measurements.

 

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Presentation: poster at E-MRS Fall Meeting 2004, Symposium F, by Renaud CAILLARD
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-23 14:09
Revised:   2009-06-08 12:55