CdS thin films with different amount of sulphur have been grown by chemical bath deposition method on GaSb single crystal substrates in order to study the passivation of gallium antimonide surface as a function of the nominal ratios concentration c(thiourea)/c (CdCl2) in the solution. The techniques used to investigate the passivation effects include photoacustic (PA) and photoluminescence (PL). Atomic force microscopy (AFM) and x-ray diffractometry were also used to correlate the results obtained from PA and PL measurements.

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