Tantalum pentaoxide (Ta2O5) dielectric films are of interest for applications in optical waveguides, antireflection coatings and MOS devices. Ta2O5 thin films of 120 nm thicknesses were prepared at room temperature by RF sputtering from a Tantalum Pentaoxide target. Deposition was performed in Argon 99.99% ambient on unheated glass substrate and without substrate heating which was either stationary in front of the target or in constant motion at RF power ranging from 50 to 350W and effect of plasma power on the surface morphology, optical properties, internal stress, refractive index and absorption of the layers was studied directly after deposition. Ta2O5 films showed different surface morphologies and surface roughness under different deposition conditions. X-ray diffraction technique (XRD) was employed to analyze the effect of deposition conditions on the structure of the films. The experimental results show that films with good qualities of surface morphology, transmittance and internal stress can be grown by the RF sputtering method on glass. Ta2O5/SiO2 multilayer coatings had smaller average compressive stress than single-layer Ta2O5 film.

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