Hybrid organic/inorganic photovoltaic (h-OPV) devices have emerged as an interesting class of solid-state organic devices.  Oxides offer several customizable properties, such as morphology, band offset, dielectric constant, and doping level that make them desirable from both a scientific and a manufacturing standpoint.  By simply varying the oxide from ZnO to TiO2, or by depositing thin layers of TiO2 onto ZnO, it is possible to increase the VOC in a device by roughly a factor of 2 from ~350mV to ~600mV.  JSC is somewhat diminished in devices with TiO2, but the fill factor of the devices is often abnormally low, due to a double-diode characteristic.  The fill factor is greatly influenced by the dielectric constant of the bulk oxide and the doping level.  This study utilizes pulsed laser deposition (PLD) to deposit oxide films, with doping gradients through the film thickness, as electron acceptor layers in bilayer h-OPV devices with P3HT donor layers.  PLD films are deposited at less than a monolayer per pulse, which allows for a high degree of control in the doping levels.  Doping in the oxide layer largely determines recombination kinetics of geminate electron-hole pairs at the donor-acceptor interface.  

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