ITO (Indium Tin Oxide) and AZO (Aluminum doped Zinc Oxide) are common semiconducting metal oxide thin films. Reducing the sheet resistance of these films while having trancparency is the main issue. For ITO layers reducing the sheet resistance is usually done by annealing in 300-600 °C after deposition. We have found that applying optimum current through layer results in the reduction of sheet resistance. This method is much faster and costs less than annealing.

ITO thin films are widely used as transparent semiconductor. LCDs and Solar Cells are some of the devices in which ITO layers are used. In our work, current is passed through ITO layer after deposition. The optimum current source does not depend on layer length ;however the voltage does. The best current is related to current cross section area (mainly thickness of layer).

22mA is the suitable current for optimum conductance with 500nm thickness for deposited ITO layer on glass substrate. More current will result in damaging the layer and less will not lead to optimum conductance. This method is suggested where annealing is not possible or current source can easily be applied to sample. Especially for solar cells current probes can put on fingers or busbars.

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