Carbon nanotubes have drawn significant attention due to their exceptional electronic and mechanical properties. Field emission devices have been investigated by several researchers due to their potential application for CNT-logic realization. In this paper an attempt has been made to investigate the field performance of emitters including a novel self-defined structure for the realization of field emission devices which were reported. These devices can find application in flat-panel displays, nanolithography systems and new sensor technologies. Comparing with other field emitters, CNT-based electron sources revealed an efficient performance at normal vacuum. The proposed structure consists of vertical CNT's grown on a silicon substrate which are encapsulated by a metal and oxide bi-layer. The presence of small holes in the metal-oxide bi-layer at the place of a cluster of carbon nanotube resembles a metallic surface on top of the silicon substrate acting as a gate-plate. The formation of field-emission requires a second substrate which is located 100 µm away from the bottom one. To investigate the field properties of this configuration, arrays of nanotubes were studied with different spatial distances. Simulation has been performed using CST package. The simulation results show that the filed amplification factor (β) relates to the distance between two cluster arrays and also increases with the length of nanotubes. For distances less than the CNT length, the screening effect will occur. It was observed that the presence of the metal-oxide gate has a favorable effect to minimize the screening effect and allows one to increase the density of CNTs in each array spot and to increase the cluster array density on the substrate, hence to increase the density of emission current. In this structure the screening effect occurs in the distance about the less than half of the CNT’s length. The distance between metal gate and the CNT’s tip is a parameter which will be studied.

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