The doping of the lead-telluride based alloys with the III-group impurities as In, Ga, Tl modifies substantially the electronic spectrum of the semiconductor. In Pb_{1‑ x}Sn_xTe (In) solid solutions Fermi level is pinned at some position that does not depend on N_In [1]. The pinned Fermi level moves continuously from the conduction band to the valence band with increasing SnTe content, passing the band gap in the composition range 0.22 ≤ x ≤ 0.28 at T = 4.2 K [2,3]. It shows metal (n-type) – insulator –metal (p-type) transition owing to x at low temperature. External IR illumination leads to substantial increment in material conductivity at T‹25K independently on the Fermi level pinning position.

Raman scattering spectra of Pb_0.85Sn_0.15Te doped with Indium in temperature range 10 to 300 K are presented. As it is well known, Pb_1-xSn_xTe crystallizes in the cubic structure of the NaCl type (O_h space group symmetry) and the first-order Raman modes are not active. In the Raman spectra of doped sample, we registered impurity induced scattering on the phonons of the Pb_1-xSn_xTe lattice which tend to folow the host lattice density of state. We registered some broader modes as a consequence of electron transition between valence band and two impurity levels and between impurity levels. At the same time we registered three local modes of impurities. The position of these modes depends on impurity center charge.

[1] B. A. Volkov, L. I. Ryabova, D. R. Khokhlov, Physics-Uspekhi 45 (8) (2002) 819.

[2] D.R. Khokhlov, I.I. Ivanchik, S.N. Raines, D.M. Watson, and J.L. Pipher, Appl. Phys. Lett. 76 (2000) 2835.

[3] K.G. Kristovskii, A.E. Kozhanov, D.E. Dolzhenko, I.I. Ivanchik, D. Watson, and D.R. Khokhlov, Phys. Solid State 46 (2004) 122.

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