The effect of the arsenic on the nature of the formed silicide in the annealed Cr/Si system is studied. The chromium layer is deposited by electron gun evaporation on the undoped and arsenic doped monocrystalline silicon (100). The samples are analysed by X-ray-diffraction (XRD) and Rutherford backscattering spectrometry (RBS). The electrical activity has been investigated by the method of the four point probes. The analysis by DXRD and RBS of the samples annealed at 500°C for different times during rapid thermal annealing (R.T.A.) showed the formation of CrSi2 disilicide for lower annealing times. The thickness of formed chromium silicide was practically the same for 30 and 60 seconds. The sheet resistance measurement in function of annealing time shows a sharp increasing in the beginning annealing. After that, it then rises slightly over time and stabilizes. The value of saturation is at around 125 and 180 for Cr / Si and Cr / Si (As), respectively. This result justifies the using of the arsenic in order to obtain ultra-shallow junctions and highly doped.

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1. The segregation of Arsenic and Boron in the interface of a polysilicon on silicon during rapid thermal annealing