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Argon ion beam voltages influence the changes of microstructure and chemical composition of aluminum nitride films in dual ion beam sputtering system

Hong-Ying Chen 1Sheng Han 2Han.-C Shih 1

1. Department of Materials and Science, National Tsing Hua University, Hsinchu, Taiwan
2. Department of Finance, National Taichung Institute of Technology, Taichung 402, Taiwan


Aluminum nitride films were prepared at room temperature by varying argon ion beam voltages from 400 V to 1200 V in a dual ion beam sputtering system. The X-ray diffraction spectra showed that ploycrystalline aluminum nitride films were synthesized above 800 V and the films consisted of both (100) and (002) crystallographic planes. The surface morphology of the films was nanoparticle-like morphology, which was observed by the field emission scanning electron microscopy, and the relative flat roughness ranged in 2-3 nm, which was measured by atomic force microscopy. The cross sectional photos of field emission scanning electron microscopy demonstrated that the nano-scaled granular structure was found above 600 V. The films thickness and its corresponding deposition rate increased with argon ion beam voltages. Regardless of whether the argon ion beam voltages changed, secondary ion mass spectroscopy spectra indicated that the uniform chemical composition in aluminum nitride films. Nevertheless, from X-ray photoelectron spectroscopy measurement, the atomic concentration in aluminum nitride films was concentrated in aluminum-rich phases, and the aluminum concentration markedly increased with argon ion beam voltages below 1000 V, above which the concentration decreased slightly. Overall, aluminum nitride films can be prepared above 600 V at room temperature and the correlation between the microstructure and composition changes of aluminum nitride films and argon ion beam voltages is also discussed.


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Presentation: poster at E-MRS Fall Meeting 2004, Symposium C, by Hong-Ying Chen
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-03-05 06:50
Revised:   2009-06-08 12:55