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Combined SRPES and SPM on selected Nanostructures on Silicon

Katarzyna Skorupska ,  Hans J. Lewerenz ,  Michael Kanis ,  Michael Lublow 

Hahn-Meitner-Institute (HMI), Glienicker Str. 100, Berlin D-14109, Germany

Abstract

The use of synchrotron radiation photoelectron spectroscopy (SRPES) in combination with scanning probe microscopy (SPM) allows chemical, electronic as well as structural analyses of (photo)electrochemically modified Si surfaces. Chemical analysis by SRPES demands high quality processing to reduce ambient air contaminations which is done using a specifically designed transfer vessel which allows in-system investigation of electrochemically treated samples. We describe this system and apply it to the investigation of the surface transformation of Si(111) from H-termination to step bunching in alkaline electrolytes. Spectral deconvolution of the Si 2p core level lines allows assessment of the predominant dissolution route of Si in alkaline solution. In an extension of these experiments, electrodeposition of Pt onto the H-terminated and the step bunched surfaces is investigated with both, SRPES and AFM. Whereas the H-terminated surfaces are in flatband situation, the step bunched structures are in accumulation with a carrier density of the order of 3x1018 cm-3 on a background doping of ~1015 cm-3. Pt electrodeposition is accompanied by silicon oxide formation, evidenced by SRPES. On step bunched surfaces, Pt dendrites are found at the step edges of the nanostructure and similarly sized dendrites are found on H-terminated surfaces. Due to the oxide growth, the underlying atomic step structure can not be resolved anymore and it is not clear whether these Pt islands grow on specific sites at the H-terminated surface. The simultaneous oxidation of the surface during Pt deposition is interpreted by hole injection into the valence band from Pt species. 

 

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Presentation: Oral at E-MRS Fall Meeting 2007, Symposium D, by Katarzyna Skorupska
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-08-09 21:58
Revised:   2009-06-07 00:44