Herein we demonstrate the epitaxial stabilization of single-crystalline (Gd_xLa_1-x)₂O₃ films on n-GaAs (001) with a controlled lattice match.  (Gd_xLa_1-x)₂O₃ films have an in-plane epitaxial relationship with a 2-fold rotation on GaAs (001). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (Gd_xLa_1-x)₂O₃ film is approximately ~5.8 eV.  However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (Gd_xLa_1-x)₂O₃ film (x = 0.97).  The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.   

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