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XEOL study of ZnO and rare-earth doped ZnO nanostructures |
Lidia Armelao 1, Robert I. Blyth 2, Franziskus Heigl 3, Astrid Jurgensen 4, Peter Ko 3, Mike Murphy 3, Tom Regier 2, Xingtai Zhou 3, Tsun-Kong Sham 3 |
1. CNR ISTM, Department of Chemistry, via Marzolo, 1, Padova 35131, Italy |
Abstract |
Extensive studies have recently appeared on the optical properties of nanostructured broad band semiconductors, due to their close dependence of morphology and optical respons. Among others, ZnO is promising for future optoelectronic devices due to its wide band-gap (3.37 eV at room temperature) and peculiar optical properties, which is also suitable as a host material for optically active impurities doping, such as rare-earth ions. A variety of morphologies of pure and RE-doped ZnO nanostructures (RE = Eu, Tb) have been grown by metal thermal evaporation in reactive atmosphere. The structures and chemistry of the sample depend on the temperature and concentration gradient during deposition and the added doping species. We studied light-emitting properties from different ZnO nanostructures, both in energy and time domain, using the synchrotron techniques X-ray excited optical luminescence (XEOL) and time-resolved X-ray excited optical luminescence (TR-XEOL). Besides structural aspects, we investigate the time behavior of luminescence from nanostructured ZnO(RE). In general, defect state luminescence decays much slower than the fast band-gap emission. Detailed analysis of the different decay components, in particular of the excitonic decay, give insight into the optical structural property correlation of nanostructured materials. The role of rare earth dopants is likely to be of structure nucleating nature, still the opening of new lanthanide-related optical channels is subjet of ongoing investigations. |
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Presentation: Oral at E-MRS Fall Meeting 2007, Symposium I, by Lidia ArmelaoSee On-line Journal of E-MRS Fall Meeting 2007 Submitted: 2007-05-23 11:00 Revised: 2009-06-07 00:44 |