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Cleavage surfaces atomic and electronic structure of the layered In4Se3 crystals as natural 2D-materials

Pavlo V. Galiy 1Anna V. Musyanovych 2Antoni Ciszewski 3Piotr Mazur 3Stefan Zuber 3

1. Electronics Department, Lviv National University, 50 Dragomanov str., Lviv 79005, Ukraine
2. University of Ulm, Macromolecular Chemistry Department, Albert-Einstein-All. 11, Ulm 89069, Germany
3. Wrocław University, Institute of Experimental Physics (IFDUWr), plac M.Borna 9, Wrocław 50-204, Poland

Abstract

Layered indium-selenides attract attention of researchers as natural 2D-materials [1, 2]. Among the layered chalcogenides crystals In4Se3 seems to be less studied, although this crystals possesses not only interlayer anisotropy properties, but also a superstructure [1] and peculiarities of the interfaces formation [2], depending on the cleavage conditions [1,2].

This work is a further step to study properties of cleavage surfaces of In4Se3 layered crystals by means of electron microscopy and spectroscopy: LEED, AFM, SEM, STM/STS, XPS. In this study we focus on the cleavage surfaces atomic (LEED, STM, AFM), and electronic (STS, XPS) structure characterization and peculiarities of the interfaces formation on these surfaces of pure In4Se3 and copper intercalated In4Se3(Cu) crystals.

Crystal bulk and cleavages surface structure (just after cleavage) studied by XRD and LEED shows fine on orthorhombic symmetry of the crystal. The cleavages do not appear to exhibit any lateral reconstruction but are not stable in UHV along time. The quasi 2D of these layered crystals is the reason of their peculiarities with respect to interface layer formation and surface nanophases educing. The formation of In-In metallic binding and metallic phase (STS) on the free cleavage surfaces of In4Se3 and Cu-In-Se bindings for In4Se3(Cu) intercalated crystals have been found by XPS. SEM and STM also observe phases educing. STM/STS, AFM study shows complicated surfaces nano-, micro- and electronic structure on the cleavage surfaces of In4Se3 crystals that have been exposed in UHV.

[1] O. Balitskii, V. Savchyn, B. Jaeckel, W. Jaegermann, Phys. E. Low-dim. syst. & nanostr. 22, (2004) 921.

[2] P. Galiy, A. Musyanovych, Ya. Fiyala, Phys. E. Low-dim. syst. & nanostr. 35, (2006) 88.

 

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Presentation: Poster at E-MRS Fall Meeting 2007, Symposium J, by Pavlo V. Galiy
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-21 20:22
Revised:   2009-06-07 00:44