Nanometer-scale patterns are increasingly required in many scientific and technological applications such as the continuing miniaturization of electronic circuits, sub-wavelength optics, x-ray optics, templated self-assembly and patterned magnetic media. Extreme Ultraviolet interference lithography (EUV-IL) has emerged in recent years to become a viable technique for producing periodic nano-structures. Several EUV-IL tools based on spatially coherent undulator radiation have been set up at synchrotron radiation facilities. The highest resolution structures obtained so far using EUV-IL have a pitch of 25 nm, which rivals e-beam lithography that has been the main tool for original pattern creation at this resolution level for decades. Both diffraction and reflection optics have been used in setups to create interference fringes. Achromatic interference schemes based on diffraction gratings are particularly advantageous as they make efficient use of the wideband beam available from undulator sources. This scheme also enables considerable flexibility in the types of achievable patterns, including two-dimensional, curved, or variable-period patterns. Being a parallel patterning technique EUV-IL provides higher throughput than e-beam lithography. Other advantages over e-beam include the practical absence of the proximity effect and the potential to avoid field-stitching problems. In this talk I will outline the main features of the technique and give examples from its applications.

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