We shall report on the possibilities of analysis of electrically active deep defects in semiconductors by means of modified Deep Level Transient Spectroscopy, the Isothermal Capacitance-Transient Spectroscopy and the Isothermal Charge-Transient Spoectroscopy, applied on the sub-micrometre level. While the first of them utilises the relaxation of the depletion layer, caused by emission of trapped charges, and requires sufficient conductivity, in the second the transient current is directly integrated. It can be applied also to low-conductivity materials like dielectrics.

The capacitance microscopes achieved a resolution sufficient to resolve the charge of a single electron. However, the standard interpretation of ICTS response is statistical, therefore many defects should be within the reach of the probe, to be applicable. Our charge-transient spectrometer achieved the resolution of a few hundred electrons but we hope to increase it approximately by one order of magnitude. With optimal shape of the probe a spatial resolution of tens of nanometres can be achieved in materials with relatively high defect concentration. At low concentrations, e.g. in device quality silicon, a resolution on the hundred-nm level can be achieved.

We shall present some results obtained on pentacene films and on thin-film transistors fabricated in crystalline islands in amorphous silicon films.

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