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Epitaxial Growth of InN Films by Molecular-beam Epitaxy Using Hydrazoic Acid (HN3) as an Efficient Nitrogen Source

Pai-Chun Wei 1,2,3Ching-Lian Hsiao 2,3Fang-Sheng Lin 2Jhih-Tai Chen 2Chih-Ming Hsu 2Kuei-Hsien Chen 2,3Li-Chyong Chen 3

1. Department of Materials and Science, National Tsing Hua University, Hsinchu, Taiwan
2. Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan (IAMS), Institute of Atomic and Molecular Sciences, No. 1, Roosevelt Rd., Sec. 4, Taipei, 10617, Taiwan, Taipei 10617, Taiwan
3. Center for Condensed Matter Sciences, National Taiwan UniVersity,Taiwan (CCMS), Taipei 10617, Taiwan


Epitaxial InN films have been successfully grown on c-plane GaN template by gas-source molecular-beam epitaxy with hydrazoic acid (HN3) as an efficient nitrogen source. Results in residual-gas analyzer show that the HN3 is highly dissociated to produce nitrogen radicals and can be controlled in the amounts of active nitrogen species by tuning HN3 pressure. A flat and high-purity InN epifilm has been realized at the temperature near 550 °C, and a growth rate of 200 nm/hr is also achieved. Moreover, the epitaxial relationship of the InN(002) on the GaN(002) is reflected in the X-ray diffraction, and the full-width at half-maximum of the InN(002) peak as narrow as 0.05° is related to a high-quality crystallinity. An infrared photoluminescence (PL) emission peak at 0.705 eV and the integrated intensity increasing linearly with excitation power suggest that the observed PL can be attributed to a free-to-bound recombination. These findings reveal that HN3 has a great potential to be an alternative nitrogen source in the growth of high-quality nitride semiconductors. Therefore, we believe that the HN3 could be a high-performance nitrogen source, which can be applied
to other growth techniques, such as MOVPE, HVPE, etc.


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Presentation: Poster at E-MRS Fall Meeting 2007, Acta Materialia Gold Medal Workshop, by Pai-Chun Wei
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-14 20:38
Revised:   2009-06-07 00:44