ALD describes methodologies for the growth of materials an atomic layer at a time, using surface limited reactions. Surface limited reactions such as underpotential deposition (UPD) are well known in electrochemistry. The work to be presented involves the use of electrochemical surface limited reactions to deposit metals and semiconductors using ALD. Electrochemical ALD promotes layer by layer growth and atomic layer control of thickness. The work being pursued in this group concerns development of electrochemical ALD, and studies of the interface chemistry needed to form nanofilms of materials electrochemically. To date, deposition cycles for Cu, Ag, Pd, Au, Ru and Pt, have been developed, as well as numerous cycles for compound semiconductors. The advantages of an electrochemical deposition methodology include: conformal deposition, room temperature deposition, less costly tooling, through mask plating, selective plating (only on areas in electrical contact), and lower particle formation. Using surface limited reactions and ALD, smooth morphologies along with deposit thicknesses control at the atom layer level, are had. Results presented here will include some discussion of compound semiconductor formation, and the deposition of elements: Pt, Cu, and Ru. These deposits are being formed using surface limited redox replacement (SLRR), a methodology traceable to the work of Brankovic, Wang and Adzic. SLRR involves use of a sacrificial element, one that will form a UPD layer on the surface and that is less noble then the desired element. Exposure of the an atomic layer deposit of the sacrificial element to a solution containing ions of a more noble element results in redox replacement by the more noble element. As the amount of deposition is limited by the amount of the sacrificial element deposited at an underpotential. This process can frequently be repeated to form elemental nanofilms layer by layer using and electrochemical ALD.

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1. Electrochemical Atomic Layer Deposition